sot-563 plastic-encapsulate transistors EMB4 general purpose transistors (dual digital transistors) features z two dta114t chips in a package marking: b4 equivalent circuit absolute maximum ratings (t a =25 ) symbol parameter value units v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -100 ma p c collector power dissipation 150 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-50 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0.5 a emitter cut-off current i ebo v eb =-4v, i c =0 -0.5 a dc current gain h fe v ce =-5v, i c =-1ma 100 600 collector-emitter saturation voltage v ce(sat) i c =-10ma, i b =-1ma -0.3 v transition frequency f t v ce =-10v, i c =-5ma, f=100mhz 250 mhz intput resistance r 1 - 7 13 ? sot-563 1 (3) (2) (1) (4) (5) (6) r 1 r 1 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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